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| 2N4402 2N4402 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 40 5.0 600 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4402 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 2001 Fairchild Semiconductor Corporation 2N4402, Rev A 2N4402 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, IE = 0 I E = 100 A, I C = 0 VCE = 35 V, VEB = 0.4 V VCE = 35 V, VEB = 0.4 V 40 40 5.0 0.1 0.1 V V V A A ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 2.0 V, IC = 150 mA VCE = 2.0 V, IC = 500 mA IC = 150 mA, I B = 15 mA IC = 500 mA, I B = 50 mA IC = 150 mA, I B = 15 mA IC = 500 mA, I B = 50 mA 30 50 50 20 150 0.40 0.75 0.95 1.30 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.75 SMALL SIGNAL CHARACTERISTICS Cob Cib hfe hfe hie hre hoe Output Capacitance Input Capacitance Small-Signal Current Gain Small-Signal Current Gain Input Impedance Voltage Feedback Ratio Output Admittance VCB = 10 V, f = 140 kHz VEB = 0.5 V, f = 140 kHz IC = 20 mA, VCE = 10 V, f = 100 MHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 1.5 30 0.75 0.10 1.0 250 7.5 8.0 100 k x10 mhos -4 8.5 30 pF pF SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, IC =150 mA, I B1 = 15 mA, VBE ( off ) = 2.0 V VCC = 30 V, IC =150 mA, I B1 = IB2 = 15 mA 15 20 225 30 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 2N4402 PNP General Purpose Amplifier (continued) Typical Characteristics VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.5 = 10 0.4 0.3 0.2 0.1 0 125 C - 40 C 400 300 200 100 0 0.1 125 C 25 C 25 C - 40 C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRE NT (mA) 500 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 C Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 - 40 C 0.8 0.6 0.4 0.2 0 25 C 25 C 125 C = 10 125C VCE = 5V 1 10 100 I C - COLLECTOR CURRENT (mA) 500 1 10 I C - COLLECTOR CURRE NT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 100 V CB = 35V 10 Input and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C ib 1 8 4 0 0.1 C ob 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) 125 1 10 REVERSE BIAS VOLTAGE (V) 50 2N4402 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current 250 I B1 = I B2 = 200 V cc = 15 V Ic 10 Turn On and Turn Off Times vs Collector Current 500 I B1 = I B2 = 400 V cc = 15 V Ic 10 TIME (nS) TIME (nS) 150 100 tr tf ts 300 200 t off 50 td 100 0 10 t on 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Rise Time vs Collector and Turn On Base Currents I B1 - TURN 0N BASE CURRENT (mA) 50 PD - POWER DISSIPATION (W) 1 Power Dissipation vs Ambient Temperature 20 10 5 30 ns t r = 15 V 0.75 SOT-223 TO-92 0.5 SOT-23 0.25 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 2N4402 PNP General Purpose Amplifier (continued) Typical Common Emitter Characteristics (f = 1.0kHz) CHAR. RELATIVE TO VALUES AT I C= -10mA CHAR. RELATIVE TO VALUES AT VCE = -10V Common Emitter Characteristics 5 hoe 2 1 0.5 h ie h re h fe Common Emitter Characteristics 1.3 h re h ie h fe hoe 1.2 h re and hoe 1.1 1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -20 0.2 0.1 _ V CE = -10 V T A = 25 oC 1 _ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 1.1 hoe 1 0.9 0.8 0.7 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 h re h ie h fe h ie h re hoe 2N4402 PNP General Purpose Amplifier (continued) Test Circuits - 30 V 200 1.0 K 0 - 16 V 200ns 50 FIGURE 1: Saturated Turn-On Switching Time Test Circuit 1.5 V - 6.0 V 1 K NOTE: BVEBO = 5.0 V 37 1.0 K 0 - 30 V 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time Test Circuit TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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